2SD1269 PDF Datasheet

The 2SD1269 is Silicon NPN epitaxial planar type(For power switching). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SD1269	Silicon NPN Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1269 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB944 APPLICATIONS ·De	Inchange Semiconductor
2		Silicon NPN epitaxial planar type(For power switching) Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB944 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio	Panasonic Semiconductor
3		Silicon PNP epitaxial planar type(For power switching) Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB944 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio	Panasonic Semiconductor

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Part No	Description	Manufacturers	PDF
2SD1205	Silicon NPN epitaxial planer type darlington(For low-frequency amplification) Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.9±0.1 0.4 Unit: mm 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q 1.5 1.5 R0.9 R0.9 q 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector t	Panasonic Semiconductor
2SD1205A	Silicon NPN epitaxial planer type darlington(For low-frequency amplification) Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.9±0.1 0.4 Unit: mm 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q 1.5 1.5 R0.9 R0.9 q 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector t	Panasonic Semiconductor
2SD1207	PNP/NPN Epitaxial Planar Silicon Darlington Transistors Ordering number:930C PNP, NPN Epitaxial Planar Silicon Darlington Transistors 2SB892, 2SD1207 Large-Current Switching Applications Features · Power supplies, relay drivers, lamp drivers, and automotive wiring. Features · FBET and MBIT processed (Original process of SANYO). · Low saturation volt	Sanyo Semicon Device
2SD1999	PNP / NPN Epitaxial Planar Transistors	Sanyo Semicon Device
2SD1998	PNP / NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SD1997	Compact Motor Driver Applications	Sanyo Semicon Device
2SD1996	Silicon PNP epitaxial planer type(For low-frequency power amplification)	Panasonic Semiconductor

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