2SD1251 PDF Datasheet

The 2SD1251 is Silicon NPN triple diffusion junction type(For power amplification). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SD1251	Silicon NPN triple diffusion junction type(For power amplification) Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed cir	Panasonic Semiconductor
2	2SD1251	Silicon NPN Triple Diffusion Junction Type SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15	Kexin
3	2SD1251A	Silicon NPN triple diffusion junction type(For power amplification) Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed cir	Panasonic Semiconductor
4	2SD1251A	Silicon NPN Triple Diffusion Junction Type SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15	Kexin

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Part No	Description	Manufacturers	PDF
2SD1205	Silicon NPN epitaxial planer type darlington(For low-frequency amplification) Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.9±0.1 0.4 Unit: mm 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q 1.5 1.5 R0.9 R0.9 q 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector t	Panasonic Semiconductor
2SD1205A	Silicon NPN epitaxial planer type darlington(For low-frequency amplification) Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.9±0.1 0.4 Unit: mm 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q 1.5 1.5 R0.9 R0.9 q 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector t	Panasonic Semiconductor
2SD1207	PNP/NPN Epitaxial Planar Silicon Darlington Transistors Ordering number:930C PNP, NPN Epitaxial Planar Silicon Darlington Transistors 2SB892, 2SD1207 Large-Current Switching Applications Features · Power supplies, relay drivers, lamp drivers, and automotive wiring. Features · FBET and MBIT processed (Original process of SANYO). · Low saturation volt	Sanyo Semicon Device
2SD1999	PNP / NPN Epitaxial Planar Transistors	Sanyo Semicon Device
2SD1998	PNP / NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SD1997	Compact Motor Driver Applications	Sanyo Semicon Device
2SD1996	Silicon PNP epitaxial planer type(For low-frequency power amplification)	Panasonic Semiconductor

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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