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2SD1105 PDF DatasheetThe 2SD1105 is SI NPN DIFFUSED JUNCTION MESA DARLINGTON. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | 2SD1105 | SI NPN DIFFUSED JUNCTION MESA DARLINGTON |
Panasonic Semiconductor |
| 2 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1105
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability
APPLICATIONS ·Designed for high power AF amplifier applications.
ABS
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Inchange Semiconductor Company |
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