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2SC5810 PDF DatasheetThe 2SC5810 is TOSHIBA Transistor Silicon NPN Epitaxial Type. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | 2SC5810 | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-speed switching: tf = 85 n
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Toshiba Semiconductor |
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