2SC5761 PDF Datasheet

The 2SC5761 is NPN SiGe RF TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SC5761	NPN SiGe RF TRANSISTOR DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low noise high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GH- Maximum stable power gain	NEC

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Part No	Description	Manufacturers	PDF
2SC5700	Silicon NPN Epitaxial VHF/UHF wide band amplifier 2SC5700 Silicon NPN Epitaxial VHF, UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features High power gain low noise figure at low power operation: \|S21\| = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 2 Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Mark	Hitachi Semiconductor
2SC5703	TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 55 n	Toshiba Semiconductor
2SC5706	POWER TRANSISTOR(5A/50V/15W)	Mospec Semiconductor
2SC5999	NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications	Sanyo Semicon Device
2SC5994	NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications	Sanyo Semicon Device
2SC5993	For power amplification For TV VM circuit	Panasonic Semiconductor
2SC5991	DC / DC Converter Applications	Sanyo Semicon Device

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