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2SC5200 PDF Datasheet

The 2SC5200 is NPN TRIPLE DIFFUSED TYPE TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2SC5200 NPN TRIPLE DIFFUSED TYPE TRANSISTOR

Power Amplifier Applications. 1. High breakdown voltage: VCEO = 230 V (min) 2. Complementary to 2SA1943 3. Suitable for use in 100-W high fidelity audio amplifier’s output stage.
Toshiba Semiconductor
Toshiba Semiconductor
2 NPN Epitaxial Silicon Transistor

1. POWER AMPLIFIER APPLICATIONS 2. Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. 3. Complementary to UTC 2SA1943
Unisonic
Unisonic
3 NPN Epitaxial Silicon Transistor

High Current Capability: IC = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1943, FJL4215. Thermal and electrical Spice models are available.
Fairchild Semiconductor
Fairchild Semiconductor
4 SILICON POWER TRANSISTOR

·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage
SavantIC
SavantIC

Product Description and Specifications

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2SC5200 transistor c5200


1. - 230V, Power NPN Transistor

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Relevant Search Results

Part NoDescriptionManufacturersPDF
2SC5201 SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra
Toshiba Semiconductor
Toshiba Semiconductor
datasheet 2SC5201 pdf
2SC5207A SILICON NPN TRIPLE DIFFUSED PLANAR

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
Hitachi Semiconductor
Hitachi Semiconductor
datasheet 2SC5207A pdf
2SC5209 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION
ETC
ETC
datasheet 2SC5209 pdf
2SC5999 NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsSanyo Semicon Device
Sanyo Semicon Device
datasheet 2SC5999 pdf
2SC5994 NPN Epitaxial Planar Silicon Transistor High-Current Switching ApplicationsSanyo Semicon Device
Sanyo Semicon Device
datasheet 2SC5994 pdf
2SC5993 For power amplification For TV VM circuitPanasonic Semiconductor
Panasonic Semiconductor
datasheet 2SC5993 pdf
2SC5991 DC / DC Converter ApplicationsSanyo Semicon Device
Sanyo Semicon Device
datasheet 2SC5991 pdf


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