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2SC5198 PDF DatasheetThe 2SC5198 is NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 2SC5198 | Silicon NPN Triple Diffused Transistor NPN Silicon NPN Triple Diffused Transistor
R
2SC5198
VCEO=140V (min) 2SA1941
70W
RoHS
APPLICATIONS
Power Amplifier Applications
FEATURES
High collector voltage VCEO=140V (min) Complementary to 2SA1941 Recommended for 70-W high-fidelity audio frequency amplifier output RoHS product
Package
TO-247
|
 JILIN SINO |
| 2 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) 2SC5198
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Character
|
 Toshiba Semiconductor |
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| 3 | SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5198
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 Base Collec
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 SavantIC |
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| 4 | 2SC5198B | Silicon NPN triple diffusion planar transistor SEMICONDUCTOR
2SC5198B Series
Silicon NPN triple diffusion planar transistor 10A, 140V, 100W
RoHS RoHS
Nell High Power Products
2.0
19.9±0.3
4.0
20.0 min
4.0 max
TO-3P(B) FEATURES
High breakdown voltage, V CEO =140V (min) Complementary to 2SA1941B TO-3P package which can be installed to th
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 NELL SEMICONDUCTOR |
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