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2SC4297 PDF Datasheet

The 2SC4297 is Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2SC4297 Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4297 500 400 10 12(Pulse24) 4 75(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C Application : Switching Regulat
Sanken electric
Sanken electric
2 SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS 2SC4297 ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML)
SavantIC
SavantIC




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Part NoDescriptionManufacturersPDF
2SC4200 NPN EPITAXIAL TYPE (VIDEO DRIVER FOR SUPER HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
datasheet 2SC4200 pdf
2SC4203 Silicon Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT High Speed Switching Applications 2SC4203 Unit: mm · High transition frequency: fT = 400 MH- (typ.) (VCE = 10 V, IC = 70 mA) · Low output capacitance: Cob < 5 pF (max) (VCB = 30 V) · High voltage: VCEO
Toshiba Semiconductor
Toshiba Semiconductor
datasheet 2SC4203 pdf
2SC4204 High-hFE/ AF Amp Applications

Ordering number:EN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications · AF amplifier, various drivers. Package Dimensions unit:mm 2003B [2SC4204] 5.0 4.0 4.0 Features · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · La
Sanyo Semicon Device
Sanyo Semicon Device
datasheet 2SC4204 pdf
2SC4997 TransistorsROHM Semiconductor
ROHM Semiconductor
datasheet 2SC4997 pdf
2SC4995 Silicon NPN EpitaxialHitachi Semiconductor
Hitachi Semiconductor
datasheet 2SC4995 pdf
2SC4994 Silicon NPN EpitaxialHitachi Semiconductor
Hitachi Semiconductor
datasheet 2SC4994 pdf
2SC4993 Silicon NPN EpitaxialHitachi Semiconductor
Hitachi Semiconductor
datasheet 2SC4993 pdf


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