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2SC3637 PDF Datasheet

The 2SC3637 is NPN Triple Diffused Planar Silicon Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2SC3637 NPN Triple Diffused Planar Silicon Transistor

Ordering number:EN1615C NPN Triple Diffused Planar Silicon Transistor 2SC3637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimension
Sanyo Semicon Device
Sanyo Semicon Device
2 SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3637 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected
SavantIC
SavantIC
3 Silicon NPN Power Transistors

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3637 DESCRIPTION ¡¤With TO-3PN package ¡¤High voltage ,high speed ¡¤High reliability APPLICATIONS ¡¤Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;co
Inchange Semiconductor
Inchange Semiconductor




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Relevant Search Results

Part NoDescriptionManufacturersPDF
2SC3600 NPN Epitaxial Planar Silicon Transistor

Ultrahigh-Definition CRT Display Video Output Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp.
Sanyo Semicon Device
Sanyo Semicon Device
datasheet 2SC3600 pdf
2SC3601 NPN Silicon Transistor

Ultrahigh-definition CRT display. Video output. Color TV chroma output. Wide-band amp. High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V.
Sanyo Semicon Device
Sanyo Semicon Device
datasheet 2SC3601 pdf
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION. Low noise : NF = 2.1 dB TYP. @ f = 2.0 GH- High power gain : GA = 10 dB TYP. @ f = 2.0 GHz
NEC
NEC
datasheet 2SC3603 pdf
2SC3998 Silicon NPN Power TransistorInchange Semiconductor
Inchange Semiconductor
datasheet 2SC3998 pdf
2SC3997 Silicon NPN TransistorInchange Semiconductor
Inchange Semiconductor
datasheet 2SC3997 pdf
2SC3996 Silicon NPN TransistorInchange Semiconductor
Inchange Semiconductor
datasheet 2SC3996 pdf
2SC3995 Silicon NPN TransistorInchange Semiconductor
Inchange Semiconductor
datasheet 2SC3995 pdf


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