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2SC2982 PDF DatasheetThe 2SC2982 is Silicon NPN Epitaxial Type TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 2SC2982 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications Medium Power Amplifier Applications
2SC2982
Unit: mm
High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)
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 Toshiba Semiconductor |
| 2 | Medium Power Amplifier Applications SMD Type
Medium Power Amplifier Applications 2SC2982
Transistors
Features
Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag
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 Kexin |
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| 3 | Transistor SMD Type
Product specification
2SC2982
Features
Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) C
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 TY Semiconductor |
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