2SC2780 PDF Datasheet

The 2SC2780 is NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SC2780	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD	NEC
2	2SC2780	Transistor Product specification 2SC2780 SOT-89 4.50±0.1 1.80±0.1 Unit:mm 1.50 ±0.1 - Features ● High Collector-emitter voltage. ● Complements to PNP type 2SA1173 1 0.48±0.1 2 3 0.80±0.1 0.44±0.1 0.53±0.1 3.00±0.1 0.40±0.1 2.60±0.1 2.50±0.1 4.00±0.1 1.Base 2.Collector 3.Emitter - A	TY Semiconductor

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Relevant Search Results

Part No	Description	Manufacturers	PDF
2SC2703	30V, Silicon NPN Epitaxial Transistor Audio Power Amplifier Applications, High DC current gain: hFE = 100 to 320	Toshiba Semiconductor
2SC2705	NPN TRANSISTOR Audio Frequency Amplifier Applications, Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MH- (typ.) Complementary to 2SA1145.	Toshiba Semiconductor
2SC2710	Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 2SC2710 For Audio Amplifier Applications Unit: mm · High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-bas	Toshiba Semiconductor
2SC2999	HF Amplifier Applications	Sanyo Semicon Device
2SC2998	NPN Planar Silicon Transistor	Sanyo
2SC2996	Silicon NPN Epitaxial	Kexin
2SC2995	Silicon NPN Epitaxial Type TRANSISTOR	Toshiba Semiconductor

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