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2SC2558 PDF Datasheet

The 2SC2558 is HG RF POWER TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2SC2558 HG RF POWER TRANSISTOR

HG Semiconductors HG RF POWER TRANSISTOR 2SC2558 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 HG Semiconductors 2SC2558HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR No
 		HGSemi
HGSemi



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Part NoDescriptionManufacturersPDF
2SC2500 NPN TRANSISTOR

Strobe Flash Applications Medium-Power Amplifier, High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)
 		Toshiba Semiconductor
Toshiba Semiconductor		 datasheet 2SC2500 pdf
2SC2502 POWER TRANSISTOR

(6.0A / 400V / 50W)
 		Mospec Semiconductor
Mospec Semiconductor		 datasheet 2SC2502 pdf
2SC2510 Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2SC2510 2~30MH- SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) l Specified 28V, 28MH- Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.) l Collector Efficiency : ηC = 35% (Min
 		Toshiba Semiconductor
Toshiba Semiconductor		 datasheet 2SC2510 pdf
2SC2999 HF Amplifier ApplicationsSanyo Semicon Device
Sanyo Semicon Device		 datasheet 2SC2999 pdf
2SC2998 NPN Planar Silicon TransistorSanyo
Sanyo		 datasheet 2SC2998 pdf
2SC2996 Silicon NPN EpitaxialKexin
Kexin		 datasheet 2SC2996 pdf
2SC2995 Silicon NPN Epitaxial Type TRANSISTORToshiba Semiconductor
Toshiba Semiconductor		 datasheet 2SC2995 pdf


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