2SC1306 PDF Datasheet

The 2SC1306 is Silicon NPN Transistor Final RF Power Output. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SC1306	Silicon NPN Transistor Final RF Power Output 2SC1306 Silicon NPN Transistor Final RF Power Output Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. WINTransceiver B C E Absolute Maximum Ratings: (TC = +25°C unless o	ETC

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Part No	Description	Manufacturers	PDF
2SC1307	70V / 8A / NPN TRANSISTOR The 2SC1307 is designed for use in high power output amplifier stages. It is intended for use in ham band communications equipment to 50 MHz. High breakdown voltage allow to withstand an open and short lord in AM operation.	ETC
2SC1317	Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 I Features Low collector to emitter saturation voltage VCE(sat) Complementary pair with 2SA719 and 2SA720 0.7±0.1 5.0±0.2	Panasonic Semiconductor
2SC1318	NPN Transistor ( 50V, 500mA ) Low collector to emitter saturation voltage VCE(sat) Complementary pair with 2SA719 and 2SA720	Panasonic Semiconductor
2SC1988	NPN SILICON HIGH FREQUNY TRANSISTOR	NEC
2SC1986	(2SC1985 / 2SC1986) SILICON POWER TRANSISTOR	SavantIC
2SC1985	(2SC1985 / 2SC1986) SILICON POWER TRANSISTOR	SavantIC
2SC1984L	(2SC1983L / 2SC1984L) NPN Silicon General Purpose Transistor	SeCoS Halbleitertechnologie GmbH

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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