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2SB930 PDF DatasheetThe 2SB930 is Silicon PNP epitaxial planar type(For power amplification). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 2SB930 | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplification Complementary to 2SD1253 and 2SD1253A
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collect
|
 Panasonic Semiconductor |
| 2 | Transistor Product specification
2SB930
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.6
|
 TY Semiconductor |
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| 3 | 2SB930A | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplification Complementary to 2SD1253 and 2SD1253A
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collect
|
Panasonic Semiconductor |
| 4 | Transistor SMD Type
Silicon PNP Epitaxial Planar Type 2SB930A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2 9.70 -0.2
Low collector-emitter saturation voltage
|
 Kexin |
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