2SB1669 PDF Datasheet

The 2SB1669 is PNP SILICON TRANSISTOR ( -60V, -3A). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SB1669	PNP SILICON TRANSISTOR ( -60V, -3A) High DC current amplifier rate hFE ≥ 100 (VCE = 5.0 V, IC = 0.5 A) Z type available for surface mounting supported prodcuts	NEC
2	2SB1669-Z	Silicon PNP Power Transistor isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1669-Z DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB1669-Z is a power transistor	Inchange Semiconductor

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Relevant Search Results

Part No	Description	Manufacturers	PDF
2SB1602	TRANSISTOR (POWER AMPLIFIER APPLICATIONS)	Toshiba Semiconductor
2SB1603	Silicon PNP epitaxial planar type(For low-voltage switching) Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO	Panasonic Semiconductor
2SB1603A	Silicon PNP epitaxial planar type(For low-voltage switching) Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO	Panasonic Semiconductor
2SB183100MA	SCHOTTKY BARRIER DIODE CHIPS	Silan
2SB183060MA	LOW IR SCHOTTKY BARRIER DIODE CHIPS	Silan
2SB177	GE PNP ALLOY JUNCTION	ETC
2SB176	GE PNP ALLOY JUNCTION	ETC

List of most widely used semiconductors

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