2SB1629 PDF Datasheet

The 2SB1629 is Silicon PNP epitaxial planar type(For power amplification). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SB1629	Silicon PNP epitaxial planar type(For power amplification) Power Transistors 2SB1629 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 s Features q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package	Panasonic Semiconductor

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Part No	Description	Manufacturers	PDF
2SB1602	TRANSISTOR (POWER AMPLIFIER APPLICATIONS)	Toshiba Semiconductor
2SB1603	Silicon PNP epitaxial planar type(For low-voltage switching) Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO	Panasonic Semiconductor
2SB1603A	Silicon PNP epitaxial planar type(For low-voltage switching) Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO	Panasonic Semiconductor
2SB183100MA	SCHOTTKY BARRIER DIODE CHIPS	Silan
2SB183060MA	LOW IR SCHOTTKY BARRIER DIODE CHIPS	Silan
2SB177	GE PNP ALLOY JUNCTION	ETC
2SB176	GE PNP ALLOY JUNCTION	ETC

List of most widely used semiconductors

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