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2SA812 PDF DatasheetThe 2SA812 is PNP SILICON EPITAXIAL TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 2SA812 | PNP General Purpose Transistors PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature
Storage Temperature
Symbol VCBO VCE
|
 WEITRON |
| 2 | SOT-23 BIPOLAR TRANSISTORS RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2 W(Tamb=25OC)
* Collector current
ICM :
-0.1 A
* Collector-base voltage
V(BR)CBO : -60
V
* Operating and storage junction temperature range
TJ,Tstg: -55O
|
 Rectron |
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| 3 | SILICON PNP TRANSISTOR 2SA812(3CG812)
硅 PNP 半 三 管, SILICON PNP TRANSISTOR
用途:用于音 放大, Purpose: Audio frequency amplifier application . 特点: 2SC1623(3DG1623)互 , Features: Complementary pair with 2SC1623(3DG1623).
限 , Absolute maximum ratings(Ta=25℃)
符
位
Symbol
Rating
Uni
|
 LZG |
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| 4 | PNP Plastic-Encapsulate Transistors Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812(PNP)
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector
|
 HOTTECH |
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