2SA1209 PDF Datasheet

The 2SA1209 is 160V/140mA High-Voltage Switching AF 100W Predriver Applications. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SA1209	160V/140mA High-Voltage Switching AF 100W Predriver Applications Ordering number:ENN779D PNP, NPN Epitaxial Planar Silicon Transistors 2SA1209, 2SC2911 160V, 140mA High-Voltage Switching and AF 100W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed. Package Di	Sanyo Semicon Device
2		SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications PINNING PIN 1 2 3 DESCRIPTION Emitter	SavantIC
3		POWER TRANSISTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications PINNING PIN 1 2 3 DESCRIPTION Emitter C	Inchange Semiconductor

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2SA1209 datasheet

1. PNP ( Datasheet PDF )

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Part No	Description	Manufacturers	PDF
2SA1200	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = 150 V · High transition frequency: fT = 120 MH- (typ.) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate) · Complementary to 2SC2880	Toshiba Semiconductor
2SA1201	Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm High voltage: VCEO = 120 V High transition frequency: fT = 120 MH- (typ.) Small flat package PC = 1 to 2 W (mounted on a ceramic substrate) Complem	Toshiba Semiconductor
2SA1202	Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Voltage Amplifier Applications 2SA1202 Unit: mm Suitable for driver of 30 to 35 watts audio amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2882	Toshiba Semiconductor
2SA1993	(2SAxxxx) SILICON PNP EPITAXIAL TYPE	Isahaya Electronics Corporation
2SA1989	For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini	ETC
2SA1988	Power Transistor	Inchange Semiconductor
2SA1987	Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PL	New Jersey Semiconductor

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