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2N6650 PDF Datasheet

The 2N6650 is POWER TRANSISTORS(10A/100W). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2N6650 PNP silicon power darington transistor

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
Central Semiconductor
Central Semiconductor
2 POWER TRANSISTORS(10A/100W)

A A A
Mospec Semiconductor
Mospec Semiconductor
3 PNP DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500, 527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Sym
Microsemi Corporation
Microsemi Corporation
4 Trans Darlington PNP 80V 10A 3-Pin(2+Tab) TO-3

New Jersey Semiconductor
New Jersey Semiconductor




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Relevant Search Results

Part NoDescriptionManufacturersPDF
2N6654 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

2N6654 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma
Seme LAB
Seme LAB
datasheet 2N6654 pdf
2N6655 Bipolar NPN Device

2N6655 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma
Seme LAB
Seme LAB
datasheet 2N6655 pdf
2N6659 N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

2N6659 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURES Switching Regulators Converters 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ
Seme LAB
Seme LAB
datasheet 2N6659 pdf
2N6693 (2N66xx) NPN POWER SILICON TRANSISTORMicrosemi Corporation
Microsemi Corporation
datasheet 2N6693 pdf
2N6691 (2N66xx) NPN POWER SILICON TRANSISTORMicrosemi Corporation
Microsemi Corporation
datasheet 2N6691 pdf
2N6690 Trans GP BJT NPN 400V 15A 3-Pin TO-61New Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N6690 pdf
2N6689 Trans GP BJT NPN 300V 15A 3-Pin TO-61New Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N6689 pdf


List of most widely used semiconductors


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   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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