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2N6500 PDF DatasheetThe 2N6500 is HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 2N6500 | Bipolar NPN Device 2N6500
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VCEO = 110V IC = 4A
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86
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 Seme LAB |
| 2 | HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
 ETC |
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| 3 | Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6500
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DESCRIPTION With TO-66 package ·Wide area of operation ·High sustaining voltage APPLICATIONS ·For high-speed switching and linearamplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fi
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 SavantIC |
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| 4 | Trans GP BJT PNP 90V 4A 3-Pin(2+Tab) TO-66 |
 New Jersey Semiconductor |
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