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2N627 PDF Datasheet

The 2N627 is Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2N627 Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box

New Jersey Semiconductor
New Jersey Semiconductor
2 2N6270 NPN Silicon Power Transistor

Texas
Texas
3 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

2N6270 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma
Seme LAB
Seme LAB
4 (2N6270 / 2N6271) Silicon Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6270 2N6271 DESCRIPTION ·With TO-3 package ·High current capability ·Wide safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector
SavantIC
SavantIC




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Relevant Search Results

Part NoDescriptionManufacturersPDF
2N6274 POWER TRANSISTORS NPN SILICON

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6274, D High-Power NPN Silicon Transistors . . . designed for use in industrial military power amplifer and switching circuit applications. High Collector Emitter Sustaining VCEO(sus) = 100 Vdc (Min) 2N6274 VCEO(sus) = 120 Vdc (Min
ON Semiconductor
ON Semiconductor
datasheet 2N6274 pdf
2N6275 POWER TRANSISTORS NPN SILICON

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6274, D High-Power NPN Silicon Transistors . . . designed for use in industrial military power amplifer and switching circuit applications. High Collector Emitter Sustaining VCEO(sus) = 100 Vdc (Min) 2N6274 VCEO(sus) = 120 Vdc (Min
ON Semiconductor
ON Semiconductor
datasheet 2N6275 pdf
2N6276 Bipolar NPN Device

2N6276 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17
Seme LAB
Seme LAB
datasheet 2N6276 pdf
2N6299 Silicon PNP Power TransistorsSavantic
Savantic
datasheet 2N6299 pdf
2N6298 Bipolar PNP DeviceSeme LAB
Seme LAB
datasheet 2N6298 pdf
2N6297 Trans Darlington PNP 80V 4A 3-Pin(2+Tab) TO-66 SleeveNew Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N6297 pdf
2N6296 Trans Darlington PNP 60V 4A 3-Pin(2+Tab) TO-66 SleeveNew Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N6296 pdf


List of most widely used semiconductors


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   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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