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2N6107 PDF Datasheet

The 2N6107 is POWER TRANSISTORS(7A/40W). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2N6107 COMPLEMENTARY SILICON POWER TRANSISTORS

2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for gen
Central Semiconductor
Central Semiconductor
2 PLASTIC POWER TRANSISTORS

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Plastic Package General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Base Voltage
CDIL
CDIL
3 HIGH SPEED MEDIUM POWER COMPLEMENTARY PAIR TRANSISTORS

2N6107 2N6292 MECHANICAL DATA Dimensions in mm 2.74 15.11 8.76 10.29 5.14 3.61 Dia. 1.26 6.35 4.57 1 23 13.51 HIGH SPEED MEDIUM POWER COMPLEMENTARY PAIR TRANSISTORS FEATURES Silicon Planar Epitaxial Base Transistors Medium Power Switching Linear Applications 2.54 Pin 1 Base 0.81 Typ.
Semelab
Semelab
4 PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor FEATURES - DC Curent Gain Specified to 7A. - Collector-Emitter Sustaining Voltage. - High Current Gain. Pb Lead-free Production specification 2N6107 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value
Galaxy Microelectronics
Galaxy Microelectronics




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Relevant Search Results

Part NoDescriptionManufacturersPDF
2N6106 EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Boca Semiconductor Corporation
Boca Semiconductor Corporation
datasheet 2N6106 pdf
2N6108 EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Boca Semiconductor Corporation
Boca Semiconductor Corporation
datasheet 2N6108 pdf
2N6109 Complementary Silicon Plastic Power Transistors

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features High DC Current Gain High Current Gain Bandwidth Product TO 220 Compact Package These Devices
ON Semiconductor
ON Semiconductor
datasheet 2N6109 pdf
2N6199 NPN SILICON RF POWER TRANSISTORAdvanced Semiconductor
Advanced Semiconductor
datasheet 2N6199 pdf
2N6198 VHF COMMUNICATIONSAcrian
Acrian
datasheet 2N6198 pdf
2N6193U3 NPN Power Silicon TransistorMA-COM
MA-COM
datasheet 2N6193U3 pdf
2N6193 PNP Silicon Power TransistorNew Jersey Semi-Conductor
New Jersey Semi-Conductor
datasheet 2N6193 pdf


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