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2N5301 PDF Datasheet

The 2N5301 is POWER TRANSISTORS(200W). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2N5301 Bipolar NPN Device

2N5301 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10
Seme LAB
Seme LAB
2 Silicon NPN Power Transistors

Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398, 4399, 5745 Low collector, saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applic
Inchange Semiconductor
Inchange Semiconductor
3 NPN SILICON POWER TRANSISTOR

SSDI
SSDI
4 Bipolar Transistor

Bipolar Transistor Features: High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A NPN Collector 3 2 Base 1 Emitter Description: High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and swi
Multicomp
Multicomp




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Relevant Search Results

Part NoDescriptionManufacturersPDF
2N5302 NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

2N5302 AUDIO POWER AMPLIFIER DC TO DC CONVERTER ! ! High Current Capability High Power Dissipation NPN PLANAR SILICON TRANSISTOR TO-3 ABSOLUTE MAXIMUM RATING (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipatio
Wing Shing Computer Components
Wing Shing Computer Components
datasheet 2N5302 pdf
2N5303 POWER TRANSISTORS NPN SILICON

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5301, D High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) Low Collector Emitter Satu
ON Semiconductor
ON Semiconductor
datasheet 2N5303 pdf
2N5305 SILICON DARLINGTON TRANSISTORS

ETC
ETC
datasheet 2N5305 pdf
2N53xx NPN EpoxyCentral Semiconductor
Central Semiconductor
datasheet 2N53xx pdf
2N5398 N-CHANNEL SILICON JUNCTION FETNew Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N5398 pdf
2N5397 N-CHANNEL SILICON JUNCTION FETNew Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N5397 pdf
2N539 Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N539 pdf


List of most widely used semiconductors


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   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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