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2N5301 PDF DatasheetThe 2N5301 is POWER TRANSISTORS(200W). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | 2N5301 | Bipolar NPN Device 2N5301
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10
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Seme LAB |
| 2 | Silicon NPN Power Transistors Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5301 2N5302 2N5303
DESCRIPTION With TO-3 package Complement to type 2N4398, 4399, 5745 Low collector, saturation voltage Excellent safe operating area
APPLICATIONS For use in power amplifier and switching
circuits applic
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Inchange Semiconductor |
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| 3 | NPN SILICON POWER TRANSISTOR |
SSDI |
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| 4 | Bipolar Transistor Bipolar Transistor
Features:
High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A
NPN
Collector 3
2 Base
1 Emitter
Description:
High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and swi
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Multicomp |
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