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2N3637 PDF DatasheetThe 2N3637 is PNP SILICON TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 2N3637 | HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation T, \ = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
2N3634 2N3636
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 Motorola Semiconductors |
| 2 | PNP SILICON TRANSISTOR 2N3637 PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3637 is a PNP Silicon Transistor, mounted in a hermetically sealed TO-39 package, designed for general purpose amplifier and high voltage switching applications.
MARKING: FULL PART NUMBER
TO
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 Central Semiconductor |
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| 3 | PNP SILICON PLANAR RF TRANSISTORS Continental Device India Limited
An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR RF TRANSISTORS
2N3635 2N3636 2N3637
TO-39 Metal Can Package
2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.
ABSOLUTE MAXIMUM RATINGS (Ta
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 CDIL |
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| 4 | PNP SILICON TRANSISTOR 2N3637
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
PNP SILICON TRANSISTOR
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )
FEATURES
High Voltage Switching
0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia .
1 2 .7
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 Seme LAB |
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