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2N3012 PDF DatasheetThe 2N3012 is Bipolar PNP Device. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 2N3012 | SWITCHING TRANSISTOR 2N3012
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
PNP SILICON
Refer to 2N869A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
@Total Device
|
 Motorola Semiconductors |
| 2 | Bipolar PNP Device Dimensions in mm (inches).
m o .c U 4 t e e h S a at .D w w w
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
2N3012
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package.
0.48 (0.019) 0.41 (0.016) dia.
2.54 (0.100) Nom.
1 Emitter
Parameter VCEO* IC(CONT) hFE ft
Test Conditions
|
 Seme LAB |
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| 3 | Small Signal Transistors Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) ( A) (V)
MIN MIN MIN MAX *ICES **ICEV
hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns)
MIN MAX
MAX
MAX MIN MAX MAX
toff (ns)
MAX
2N2896 NPN AMPL, S
|
 Central Semiconductor |
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| 4 | 2N3012CSM | Bipolar PNP Device Dimensions in mm (inches).
0.51 ± 0.10 (0.02 ± 0.004)
2.54 ± 0.13 (0.10 ± 0.005)
m o .c U 4 t e e h S a at .D w w w
0.31 rad. (0.012)
2N3012CSM
3
2
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005)
1 Base
Parameter VCEO* IC(CONT) hFE ft
Test Conditions
@ 0.5, 30m (VCE , IC)
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Seme LAB |
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