1SS293 PDF Datasheet

The 1SS293 is DIODE (LOW VOLTAGE HIGH SPEED SWITCHING). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	1SS293	DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Low forward voltage Low reverse surrent Small package : VF (3) = 0.54V (typ.) : IR = 5 A (max) 1SS293 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse volt	Toshiba Semiconductor

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Part No	Description	Manufacturers	PDF
1SS294	DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching - Low forward voltage - Low reverse surrent - Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC 59 1SS294 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit	Toshiba Semiconductor
1SS295	DIODE (UHF BAND MIXER APPLICATIONS)	Toshiba Semiconductor
1SS295	DIODE (UHF BAND MIXER APPLICATIONS)	Toshiba Semiconductor
1SS294	DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)	Toshiba Semiconductor
1SS286	Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching	Hitachi Semiconductor
1SS272	SILICON EPITAXIAL PLANAR DIODE	Toshiba Semiconductor

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