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1SS193 PDF DatasheetThe 1SS193 is SILICON EPITAXIAL PLANAR DIODE. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 1SS193 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS193
Switching Diode
FEATURES y Low forward voltage y Fast reverse recovery time
MARKING: F3
F3 F3
SOT-23
1 3
2
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings @Ta=25�
|
 JCET |
| 2 | DIODE RoHS
1SS193 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current IF : 100 mA Reverse Voltage
VR : 80V
OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC
1
1.
2.4 1.3
SOT-23
3
2
ONIC CMarking:F3
2.9
|
 WEJ |
|
| 3 | Surface Mount Switching Diodes Surface Mount Switching Diodes
P b Lead(Pb)-Free
Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications
Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Me
|
 WEITRON |
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| 4 | Switching Diodes 1. ANODE 2. N.C. 3. CATHODE
Features
Low forward voltage
: VF(3)=0.9V(typ.)
Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: F3
Maximum Ratings @TA=25℃
Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Power D
|
 LGE |
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