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Datasheet 1N5062 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | 1N5062 | Plastic Silicon Rectifier 1N5059-1N5062
Plastic Silicon Rectifier
VOLTAGE RANGE: 200---800 V CURRENT: 2.0 A
Features
Low cost Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand and s im ilar s olvents
DO - 15
Mechanical Data
Cas e: JE |
LGE |
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10 | 1N5062 | GLASS PASSIVATED SILICON RECTIFIERS 1N5059 1N5061 1N5060 1N5062 GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT
GPR-1A CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for |
Central Semiconductor |
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9 | 1N5062 | STANDARD AVALANCHE DIODE 1N5059-1N5062
High-reliability discrete products and engineering services since 1977
STANDARD AVALANCHE DIODE
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard |
Digitron Semiconductors |
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8 | 1N5062 | Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
1N5059 to 1N5062 Controlled avalanche rectifiers
Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 19
Philips Semiconductors
Product specification
Controlled avalanche rectifier |
NXP Semiconductors |
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