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TGA1135B datasheet


1. PDF - 1W Power Amplifier

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  • TGA1135B

    18-27.5 GHz 1W Power Amplifier

    Advance Product Information Feb 4, 2000 18-27.5 GH- 1W Power Amplifier TGA1135B Key Features 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GH- 30 dBm Nominal P1dB 38dBm OTOI typical Typical 15dB Input, Output RL Bias 6 - 7V @ 540 mA On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications Point-to-Point Radio Point-to-Multipoint Communications Ka Band Sat-Com TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V, 540mA 18 16 14

    • TriQuint Semiconductor TriQuint Semiconductor

  • TGA1135B-SCC

    18-27 GHz 1W Power Amplifier

    Product Datasheet February 14, 2008 18-27 GH- 1W Power Amplifier Key Features TGA1135B-SCC 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GH- 29 dBm Nominal P1dB 37dBm OTOI typical Typical 15dB Input, Output RL Bias 6 - 7V @ 540 mA On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm x 0.1016mm Primary Applications Point-to-Point Radio Point-to-Multipoint Communications K Band Sat-Com TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V, 540mA P

    • TriQuint Semiconductor TriQuint Semiconductor




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