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SML1001R1AN Datasheet PDF | Stock |
| Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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Matched Search Results
- SML1001R1AN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
LAB TO3 Package Outline. Dimensions in mm (Inches) SEME SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1.10W 1.10W 1.30W 1.30W POWER MOS IV™ N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) Parameter VDSS ID IDM VGS PD TJ , TSTJ Drain Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate Source Voltage Total Power Dissipation @ Tcase = 25°C Derate above 25°C Operating a
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