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RF1S60P03SM Datasheet PDF | Stock


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datasheet RF1S60P03SM download

Matched Search Results

  • RF1S60P03SM

    60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs

    S E M I C O N D U C T O R RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features 60A, 30V rDS(ON) = 0.027Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using th

  • Fairchild Semiconductor Fairchild Semiconductor

  • RF1S60P03SM

    60A/ 30V/ 0.027 Ohm/ P-Channel Power MOSFETs

    RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 File Number 3951.3 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors ca

  • Intersil Corporation Intersil Corporation





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  • RF1S70N06SM - N-Channel Enhancement-Mode Power MOSFETs

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List of most widely used semiconductors

  • 1N4007

    The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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