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MMBR920L Datasheet PDF | Stock |
| Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| Product Description and Specifications |
Displays the Product Image or Pinouts. |

Matched Search Results
- MMBR920L
Silicon NPN RF Transistor
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR920L DESCRIPTION ·Low Noise NF= 2.4dB TYP. @ f= 500MH- ·High Gain Gpe= 15dB TYP. @ f= 500MHz APPLICATIONS ·Designed for thick and thin-film circuits using surface mount components and requiring low-noise , high-gain signal amplification at frequencies to 1 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO - MMBR920L
NPN SIlicon High Frequency Transistor - MMBR920L
Trans GP BJT NPN 15V 0.035A 3-Pin SOT-23 - MMBR920Lxx
NPN SIlicon High Frequency Transistor
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