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IRG4PC50WPBF Datasheet PDF | Stock |
| Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| Product Description and Specifications |
Displays the Product Image or Pinouts. ![]() 1. - 600V, 55A, IGBT, Transistor [ Learn More ] |
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- IRG4PC50WPBF
INSULATED GATE BIPOLAR TRANSISTOR
PD - 94858 IRG4PC50WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free C VCES = 600V G E VCE(on) max. = 2.30V @VGE = 15V, IC = 27A n
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