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AT49LV080 Datasheet PDF | Stock |
| Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| Product Description and Specifications |
Displays the Product Image or Pinouts. |
Matched Search Results
- AT49LV080
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
Features Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-By-Byte Programming - 30 s, Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 25 mA Active Current - 50 A CMOS Standby Current Typical 10,000 Write Cycles Small Packaging - 8 x 14 mm CBGA Description The AT49B - AT49LV080-12CC
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
Features Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-By-Byte Programming - 30 s, Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 25 mA Active Current - 50 A CMOS Standby Current Typical 10,000 Write Cycles Small Packaging - 8 x 14 mm CBGA Description The AT49B - AT49LV080-12CI
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
Features Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-By-Byte Programming - 30 s, Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 25 mA Active Current - 50 A CMOS Standby Current Typical 10,000 Write Cycles Small Packaging - 8 x 14 mm CBGA Description The AT49B - AT49LV080-12RC
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
Features Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-By-Byte Programming - 30 s, Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 25 mA Active Current - 50 A CMOS Standby Current Typical 10,000 Write Cycles Small Packaging - 8 x 14 mm CBGA Description The AT49B - AT49LV080-12RI
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
Features Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-By-Byte Programming - 30 s, Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 25 mA Active Current - 50 A CMOS Standby Current Typical 10,000 Write Cycles Small Packaging - 8 x 14 mm CBGA Description The AT49B
ATMEL Corporation ATMEL Corporation ATMEL Corporation ATMEL Corporation ATMEL CorporationRelevant Search Results
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- AT49SV322AT - 32-megabit (2M x 16/4M x 8) 1.8-volt Only Flash Memory
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