2SK405 DataSheet PDF Search

2SK405 Datasheet PDF | Stock

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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2SK405

Silicon N Channel MOS type

Toshiba America Electronic Components

2SK4057

MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC, DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 15.0 mΩ MAX. (VGS = 10 V, ID = 15 A) Low QGD: QGD = 2.8 nC TYP. 4.5 V drive available ORDERING INFORMATION PART NUMBER 2SK4

NEC

2SK4058

MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC, DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 24 A) Low QGD: QGD = 6.5 nC TYP. 4.5 V drive available ORDERING INFORMATION PART NUMBER 2SK40

NEC

2SK4059TK

Silicon N Channel Junction Type

2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Application for compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05 Unit: mm Absolute Maximum Ratings (Ta=25°C) 0.45 0.45 1.4±0.05 Characteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 55~125 Unit V mA mW °C Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Note: Using continuously under heavy loads

Toshiba Semiconductor

2SK4059TV

Silicon N Channel Junction Type

2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Application for Ultra-compact ECM 0.2±0.05 1.2±0.05 0.3±0.05 3 0.8±0.05 Unit: mm 1.2±0.05 0.8±0.1 Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 55~125 Unit V mA mW °C °C 0.4 1 2 Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range 0.4 0.28±0.02 Note: Using continuousl

Toshiba Semiconductor

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