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2SK330 Datasheet PDF | Stock |
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- 2SK330
Silicon N Channel Junction Type Transistor
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK330 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 320 Ω (typ.) (IDSS = 5 mA) Complementary to 2SJ105 Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS 50 V Gate current IG 10 m - 2SK3301
Silicon N Channel MOS Type Field Effect Transistor
2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK3301 Switching Regulatorand DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltag - 2SK3302
Silicon N Channel MOS Type Field Effect Transistor
2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate volta - 2SK3304
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply. ORDERING INFORMATION PART NUMBER 2SK3304 PACKAGE TO-3P FEATURES Low gate charge : QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A) Gate voltage rating : ±30 V Low on-state resistance : RDS(o - 2SK3305
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3305 2SK3305-S 2SK3305-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low gate charge: QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A) Gate voltage
Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
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