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What is IXFX220N17T2?

This electronic component, produced by the manufacturer "IXYS Corporation", performs the same function as "GigaMOS TrenchT2 HiperFET Power MOSFET".


IXFX220N17T2 Datasheet PDF - IXYS Corporation

Part Number IXFX220N17T2
Description GigaMOS TrenchT2 HiperFET Power MOSFET
Manufacturers IXYS Corporation 
Logo IXYS Corporation Logo 


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Total 6 Pages



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Advance Technical Information
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK220N17T2
IXFX220N17T2
VDSS =
ID25 =
RDS(on)
trr
170V
220A
6.3mΩ
140ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
170
170
V
V
± 20 V
± 30 V
220 A
160 A
550 A
110 A
2J
1250
W
20 V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min. Typ. Max.
170 V
2.5 5.0 V
± 200 nA
25 μA
3 mA
5.1 6.3 mΩ
G
DS
PLUS247 (IXFX)
Tab
G
DS
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
Features
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Synchronous Recification
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
www.DataSheet4U.net
DS100230(01/10)

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IXFX220N17T2 equivalent
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
400
RG = 1, VGS = 10V
350 VDS = 85V
300 I D = 200A
250
200
150
I D = 100A
100
50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
700
t r td(on) - - - -
600 TJ = 125ºC, VGS = 10V
VDS = 85V
500
I D = 200A
160
140
120
400 100
I D = 100A
300 80
200 60
100 40
0 20
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
600
t f td(off) - - - -
500 RG = 1, VGS = 10V
VDS = 85V
400
170
150
130
300 TJ = 125ºC
110
200 TJ = 25ºC
90
100 70
0 50
40 60 80 100 120 140 160 180 200
ID - Amperes
IXFK220N17T2
IXFX220N17T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
350
RG = 1, VGS = 10V
300 VDS = 85V
250 TJ = 25ºC
200 TJ = 125ºC
150
100
50
0
40 60 80 100 120 140 160 180
ID - Amperes
200
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
600
550 t f
td(off) - - - -
RG = 1, VGS = 10V
500 VDS = 85V
450
150
140
130
120
400 I D = 200A
350
110
100
300
I D = 100A
90
250 80
200 70
150 60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
800
700 t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
600 VDS = 85V
700
600
500
500 I D = 200A
400
400
I D = 100A
300
300 200
200 100
100 0
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2010 IXYS CORPORATION, All Rights Reserved


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Featured Datasheets

Part NumberDescriptionMFRS
IXFX220N17T2The function is GigaMOS TrenchT2 HiperFET Power MOSFET. IXYS CorporationIXYS Corporation

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