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What is IXFT340N075T2?

This electronic component, produced by the manufacturer "IXYS Corporation", performs the same function as "TrenchT2 HiPerFET Power MOSFET".


IXFT340N075T2 Datasheet PDF - IXYS Corporation

Part Number IXFT340N075T2
Description TrenchT2 HiPerFET Power MOSFET
Manufacturers IXYS Corporation 
Logo IXYS Corporation Logo 


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Advance Technical Information
TrenchT2TM HiPerFETTM IXFH340N075T2
Power MOSFET
IXFT340N075T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
RDS(on)
75V
340A
3.2mΩ
TO-247 (IXFH)
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
M
d
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
75
75
V
V
± 20 V
340 A
160 A
850 A
170 A
960 mJ
935 W
-55 ... +175
175
-55 ... +175
300
260
°C
°C
°C
°C
°C
1.13 / 10
Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 3mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Note 1
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
±200 nA
25 μA
1.5 mA
3.2 mΩ
G DS
D (TAB)
TO-268 (IXFT)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Diode
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC/DC Converters and Off-line UPS
z Primary- Side Switch
z High Current Switching Applications
w©w20w09.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100194(9/09)

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IXFT340N075T2 equivalent
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
70
RG = 1, VGS = 10V
65 VDS = 37.5V
60
I D = 200A
55
50
I D = 100A
45
40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
400
350 t r
td(on) - - - -
TJ = 125ºC , VGS = 10V
300 VDS = 37.5V
I D = 200A
90
80
70
250 60
200 50
150
I D = 100A
40
100 30
50 20
0 10
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
48 85
44
t f td(off) - - - -
RG = 1, VGS = 10V
80
VDS = 37.5V
40 75
36 70
32
TJ = 25ºC, 125ºC
65
28 60
24 55
20 50
100 110 120 130 140 150 160 170 180 190 200
ID - Amperes
IXFH340N075T2
IXFT340N075T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
RG = 1, VGS = 10V
65 VDS = 37.5V
TJ = 125ºC
60
55
50
TJ = 25ºC
45
40
100 110 120 130 140 150 160 170 180 190 200
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
50
45 t f
td(off) - - - -
RG = 1, VGS = 10V
40 VDS = 37.5V
90
85
80
35 75
30 I D = 100A, 200A
25
70
65
20 60
15 55
10 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
500
450 t f
td(off) - - - -
400 TJ = 125ºC , VGS = 10V
VDS = 37.5V
350
400
360
320
280
300 240
250
I D = 200A
200
150
I D = 100A
200
160
120
100 80
50 40
00
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved


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Featured Datasheets

Part NumberDescriptionMFRS
IXFT340N075T2The function is TrenchT2 HiPerFET Power MOSFET. IXYS CorporationIXYS Corporation

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