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What is IXFT20N80P?

This electronic component, produced by the manufacturer "IXYS Corporation", performs the same function as "PolarHV HiPerFET Power MOSFET".


IXFT20N80P Datasheet PDF - IXYS Corporation

Part Number IXFT20N80P
Description PolarHV HiPerFET Power MOSFET
Manufacturers IXYS Corporation 
Logo IXYS Corporation Logo 


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No Preview Available ! IXFT20N80P datasheet, circuit

PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 20N80P
IXFT 20N80P
IXFV 20N80P
IXFV 20N80PS
VDSS =
ID25 =
RDS(on)
trr
800 V
20 A
520 m
250 ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 4
TC = 25° C
Maximum lead temperature for soldering
Plastic case for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 types
Maximum Ratings
800 V
800 V
TO-247 (IXFH)
± 30
± 40
20
50
10
30
1.0
V
V
TO-268 (IXFT)
A
A
A
G
mJ S
J
10 V/ns PLUS220 (IXFV)
(TAB)
D (TAB)
500
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
1..65 / 2.5..15
6
5.5
4
N/lb
g
g
g
G DS
D (TAB)
PLUS220 SMD(IXFV..S)
G
S
D (TAB)
G = Gate D = Drain
S = Source Tab = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
800 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.0 V
IGSS VGS = ± 30 VDC, VDS = 0
± 200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 10 A
Pulse test, t 300 µs, duty cycle d 2 %
520 m
Features
l International standard packages
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
DS99511E(03/06)
www.©D2a00t6aSIXhYeSeAtl4l rUigh.tns eretserved

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IXFT20N80P equivalent
TO-247AD (IXFH) Outline
123
IXFH 20N80P IXFT 20N80P
IXFV 20N80P IXFV 20N80PS
Package Outline Drawings
TO-268 (IXFT) Outline
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
P
Q
R
S
Millimeter
Min. Max.
4.7 5.3
2.2 2.54
2.2 2.6
1.0 1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
© 2006 IXYS All rights reserved
IXYS REF: F_20N80P (7J) 03-01-06-A.XLS


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Featured Datasheets

Part NumberDescriptionMFRS
IXFT20N80PThe function is PolarHV HiPerFET Power MOSFET. IXYS CorporationIXYS Corporation
IXFT20N80QThe function is HiPerFETTM Power MOSFETs Q-Class. IXYS CorporationIXYS Corporation

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