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PDF SI7991DP Data sheet ( Hoja de datos )
| Número de pieza | SI7991DP | |
| Descripción | Dual P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
Si7991DP
Viswwhwa.DyatSaSihleiceto4Un.cioxm
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.023 @ VGS = −10 V
−30
0.035 @ VGS = −4.5 V
PowerPAK SO-8
ID (A)
−10.2
−8.1
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
with Low 1.07-mm Profile
APPLICATIONS
D Load Switch
− Notebook PCs
− Desktop PCs
− Game Stations
D Battery Switch
S1
6.15 mm
D1
8
D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Ordering Information: Si7991DP-T1
Bottom View
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
−30
"20
−10.2
−6.6
−8.2
−5.3
−30
−2.9
−1.2
3.5 1.4
2.2 0.9
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
28
60
3
Maximum
35
85
3.7
Unit
_C/W
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Si7991DP
Viswwhwa.DyatSaSihleiceto4Un.cioxm
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.02
0.05
0.01
10−4
Single Pulse
10−3
10−2
Square Wave Pulse Duration (sec)
10−1
1
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7991DP.PDF ] | |
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