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PDF TPC8013-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8013-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8013-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
TPC8013-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
Unit: mm
· Small footprint due to small and thin package
· High speed switching
· Small gate charge: Qg = 48 nc (typ.)
· Low drain-source ON resistance: RDS (ON) = 5.4 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 25 S (typ.)
· Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
· Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
www.DataShSeinegt4leUp.cuolsme avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
15
60
1.9
1.0
146
15
0.19
150
-55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
1 2002-03-25
1 page  
RDS (ON) – Ta
12
10
8
VGS = 4.5 V
6
4 10
ID = 15, 7.5, 3.8
ID = 15, 7.5, 3.8
2
0
-80 -40
0
Common source
Pulse test
40 80 120 160
Ambient temperature Ta (°C)
TPC8013-H
100
10
10
5
3
IDR – VDS
1
VGS = 0 V
1
0.1
0 -0.2
Common source
Ta = 25°C
Pulse test
-0.4 -0.6 -0.8
-1
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1 1
www.DataSheet4U.com Drain-source voltage
10
VDS
(V)
100
Vth – Ta
2.5
2
1.5
1
Common source
0.5 VDS = 10 V
ID = 1 mA
Pulse test
0
-80 -40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
0.4
0
0 50 100 150 200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
40
Common source
Ta = 25°C
ID = 15 A
Pulse test
30
16
14
12
VDD = 24 V
20
12
VDS
6
10
12 VDD = 24 V
8
VGS
6
10
6
4
2
00
0 10 20 30 40 50 60
Total gate charge Qg (nC)
5 2002-03-25
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8013-H.PDF ] | |
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