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What is CY7C1302DV25?

This electronic component, produced by the manufacturer "Cypress Semiconductor", performs the same function as "9-Mbit Burst of Two Pipelined SRAMs".


CY7C1302DV25 Datasheet PDF - Cypress Semiconductor

Part Number CY7C1302DV25
Description 9-Mbit Burst of Two Pipelined SRAMs
Manufacturers Cypress Semiconductor 
Logo Cypress Semiconductor Logo 


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PREMILINARY
CY7C1302DV25
9-Mbit Burst of Two Pipelined SRAMs
with QDR™ Architecture
Features
• Separate independent Read and Write data ports
— Supports concurrent transactions
• 167-MHz clock for high bandwidth
— 2.5 ns clock-to-Valid access time
• 2-word burst on all accesses
• Double Data Rate (DDR) interfaces on both Read and
Write ports (data transferred at 333 MHz) @ 167 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two output clocks (C and C) account for clock skew
and flight time mismatching
• Single multiplexed address input bus latches address
inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• 2.5V core power supply with HSTL Inputs and Outputs
• 13 x 15 x 1.4 mm 1.0-mm pitch fBGA package, 165 ball
(11 x 15 matrix)
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–1.9V)
• JTAG Interface
Configurations
CY7C1302DV25 – 512K x 18
Functional Description
The CY7C1302DV25 is a 2.5V Synchronous Pipelined SRAM
equipped with QDR™ architecture. QDR architecture consists
of two separate ports to access the memory array. The Read
port has dedicated data outputs to support Read operations
and the Write Port has dedicated data inputs to support Write
operations. Access to each port is accomplished through a
common address bus. The Read address is latched on the
rising edge of the K clock and the Write address is latched on
the rising edge of K clock. QDR has separate data inputs and
data outputs to completely eliminate the need to “turn-around”
the data bus required with common I/O devices. Accesses to
the CY7C1302DV25 Read and Write ports are completely
independent of one another. All accesses are initiated
synchronously on the rising edge of the positive input clock
(K). In order to maximize data throughput, both Read and
Write ports are equipped with DDR interfaces. Therefore, data
can be transferred into the device on every rising edge of both
input clocks (K and K) and out of the device on every rising
edge of the output clock (C and C, or K and K in a single clock
domain) thereby maximizing performance while simplifying
system design. Each address location is associated with two
18-bit words that burst sequentially into or out of the device.
Depth expansion is accomplished with a Port Select input for
each port. Each Port Select allows each port to operate
independently. 38-05625
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Logic Block Diagram (CY7C1302DV25)
D[17:0]
18
A(17:0)
18
K
K
Address
Register
CLK
Gen.
Write
Data Reg
Write
Data Reg
256Kx18 256Kx18
Memory Memory
Array Array
Read Data Reg.
Address
Register
18 A(17:0)
Control
Logic
RPS
C
C
Vref
WPS
BWS0
BWS1
Control
Logic
36 18
Reg. Reg. 18
18
Reg.
18
18
Q[17:0]
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05625 Rev. **
Revised July 29, 2004

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CY7C1302DV25 equivalent
PREMILINARY
CY7C1302DV25
Truth Table[2, 3, 4, 5, 6, 7]
Operation
Write Cycle:
Load address on the rising edge of K clock; input write
data on K and K rising edges.
Read Cycle:
Load address on the rising edge of K clock; wait one
cycle; read data on 2 consecutive C and C rising edges.
NOP: No Operation
K
L-H
L-H
L-H
Standby: Clock Stopped
Stopped
Write Cycle Descriptions[2,8]
RPS
X
L
H
X
WPS
L
X
H
X
DQ
D(A+0)at
K(t)
DQ
D(A+1) at
K(t)
Q(A+0) at Q(A+1) at
C(t+1)
C(t+1)
D=X
Q = High-Z
Previous
State
D=X
Q = High-Z
Previous
State
BWS0
L
L
L
BWS1
L
L
H
K
L-H
L-H
L H–
H L L-H
H L–
H H L-H
K Comments
– During the Data portion of a Write sequence, both bytes (D[17:0]) are written into the device.
L-H During the Data portion of a Write sequence, both bytes (D[17:0]) are written into the device.
– During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the
device. D[17:9] remains unaltered.
L-H During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the
device. D[17:9] remains unaltered.
– During the Data portion of a Write sequence, only the byte (D[17:9]) is written into the device.
D[8:0] remains unaltered.
L-H During the Data portion of a Write sequence, only the byte (D[17:9]) is written into the device.
D[8:0] remains unaltered.
– No data is written into the device during this portion of a Write operation.
H H – L-H No data is written into the device during this portion of a Write operation.
Notes:
2. X = Don't Care, H = Logic HIGH, L = Logic LOW, represents rising edge.
3. Device will power-up deselected and the outputs in a three-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A+0, A+1 represent the addresses sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t+1 is the first clock cycle succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically. 38-05625
8. Assumes a Write cycle was initiated per the Write Port Cycle Description Truth Table. BWS0, BWS1 can be altered on different portions of a Write cycle, as long
as the set-up and hold requirements are achieved. 38-05625
Document #: 38-05625 Rev. **
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CY7C1302DV25The function is 9-Mbit Burst of Two Pipelined SRAMs. Cypress SemiconductorCypress Semiconductor

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