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What is LP3929?

This electronic component, produced by the manufacturer "National Semiconductor", performs the same function as "High Speed Bi-Directional Level Shifter and Ultra Low-Dropout CMOS Voltage Regulator and Line".


LP3929 Datasheet PDF - National Semiconductor

Part Number LP3929
Description High Speed Bi-Directional Level Shifter and Ultra Low-Dropout CMOS Voltage Regulator and Line
Manufacturers National Semiconductor 
Logo National Semiconductor Logo 


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www.DataSheet4U.com
July 2006
LP3929
High Speed Bi-Directional Level Shifter and Ultra
Low-Dropout CMOS Voltage Regulator and Line
Protection
General Description
The LP3929 is designed for portable and wireless applica-
tions requiring level translation and power supply generation
in a compact footprint.
The device level translates 1.8 V LVCMOS on the host (A)
side to 2.85 V LVCMOS levels on the card (B) side for a
miniSD / SD 4-bit bi-directional data bus.
Independent direct control of the CMD, Data0 and Data1-3
paths support mini SD state machine requirements. A shut-
down pin is provided for the level shifters and regulator. The
f_CLK_A is a feedback clock to the host which can be used
to overcome level shifter bus delay.
The built-in low-dropout voltage regulator is ideal for mobile
phone and battery powered wireless applications. It provides
up to 200 mA from a 3.05 V to 5.5 V input. It is stable with
small 1.0 µF ±30% ceramic and high quality tantalum output
capacitors, requiring smallest possible PC board area.
The card (B port) side channels have integration of ASIP
(Application Specific Integrated Passives) - on chip inte-
grated pull-up, pull-down, series resistors and capacitors for
EMC filtering. It is designed to tolerate IEC61000-4-2 level 4
ESD: ±15 kV air discharge, ±8 kV direct contact.
Key Specifications
Level Shifter:
n 6-signal Level Shifter (5 bi-directional and 1
uni-direction)
n 3 ns (typ) propagation delay
n Channel-to-channel skew < 1 ns (max)
Low-Dropout Regulator:
n 3.05 V to 5.5 V input range
n 2.85 V at 200 mA
n Fast Turn-On time: 30 µs (typ)
n 110 mV (max) dropout with 200 mA load
n Thermal shutdown at 160˚C (typ)
Protection Block (B Side):
n Robust IEC ESD Protection: ±15 kV Air Gap, ±8 kV
Direct Contact
n ASIP / EMI Filtering
Features
n Ultra small micro SMD 24 bump package
n 6-signal level translation 1.8 V to 2.85 V
n LDO stable with ceramic and high quality tantalum
capacitors
Typical Application Circuit
© 2006 National Semiconductor Corporation DS201868
20186801
www.national.com

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LP3929 equivalent
Pin Descriptions (Continued)
TABLE 1. Operation Modes
Inputs
EN CMD_DIR DIR_0
LXX
HL L
HL L
HLH
HLH
HH L
HH L
HHH
HHH
H = VDDA, L = VSS
Mode
DIR_1-3
X Level shifter / LDO = off (Shutdown Mode)
L All channels (D0-D3 and CMD): B A Direction
H A B Direction: D1-D3, B A Direction: CMD and D0
L A B Direction: D0, B A Direction: CMD and D1-D3
H A B Direction: D0-D3, B A Direction: CMD
L A B Direction: CMD, B A Direction: D0-D3
H A B Direction: CMD and D1-D3, B A Direction: D0
L A B Direction: CMD and D0, B A Direction: D1-D3
H All channels (D0-D3 and CMD): A B Direction
5 www.national.com


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