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What is MBR760?

This electronic component, produced by the manufacturer "General Semiconductor", performs the same function as "Schottky Rectifier ( Diode )".


MBR760 Datasheet PDF - General Semiconductor

Part Number MBR760
Description Schottky Rectifier ( Diode )
Manufacturers General Semiconductor 
Logo General Semiconductor Logo 


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MBR735 THRU MBR760
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes
TO-220AC
0.160 (4.06)
0.140 (3.56)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
12
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
PIN 1
PIN 2
Dimensions in inches and (millimeters)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
CASE
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Metal to silicon rectifier,
majority carrier conduction
Low power loss, high efficiency
High current capability, low forward
voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 5 in. - lbs. max.
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBR735
MBR745
MBR750
MBR760
UNITS
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (SEE FIG 1)
Peak repetitive forward current (square wave, 20 KHZ)
at TC=105°C
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
VRRM
VRWM
VDC
I(AV)
IFRM
IFSM
35
35
35
45 50
45 50
45 50
7.5
15.0
150.0
60 Volts
60 Volts
60 Volts
Amps
Amps
Amps
Peak repetitive reverse surge current (NOTE 1)
Maximum instantaneous
forward voltage at
(NOTE 2)
IF=7.5A, TC=25°C
IF=7.5A, TC=125°C
IF=15A, TC=25°C
IF=15A, TC=125°C
Maximum instantaneous reverse current at
rated DC blocking voltage
TC=25°C
(NOTE 1)
TC=125°C
Voltage rate of change (rated VR)
Maximum thermal resistance, (NOTE 3)
Operating junction temperature range
Storage temperature range
IRRM
VF
IR
dv/dt
RΘJC
RΘJA
TJ
TSTG
1.0 0.5
- 0.75
0.57 0.65
0.84 -
0.72 -
0.1
15.0
10,000
3.0
60.0
-65 to +150
-65 to +175
0.5
50
Amps
Volts
mA
V/µs
°C/W
°C
°C
NOTES:
(1) 2.0µs, pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient
4/98


Part Details

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