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What is 30JL2C41?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK".


30JL2C41 Datasheet PDF - Toshiba Semiconductor

Part Number 30JL2C41
Description SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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30JL2C41
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
30JL2C41
SWITCHING MODE POWER SUPPLY APPLICATON
CONVERTER & CHOPPER APPLICATION
Unit: mm
! Repetitive Peak Reverse Voltage : VRRM = 600 V
! Average Output Rectified Current : IO = 30 A
! Ultra Fast Reverse-Recovery Time : trr = 50 ns (Max)
! Low Switching Losses and Output Noise
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
VRRM
IO
IFSM
Tj
Tstg
RATING
600
30
150 (50Hz)
165 (60Hz)
40~150
40~150
0.8
UNIT
V
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
Weight: 4.85g
1216D1A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery time
Forward Recovery time
Thermal Resistance
VFM
IRRM
trr
tfr
Rth (jc)
IFM = 15A
VRRM = 600V
IF = 2A, di / dt = 50A / µs
IF = 1A
Total DC, Junction to Case
VFM, IRRM, trr, tfr : A value applied to one cell.
MIN MAX UNIT
2.0 V
50 µA
50 ns
150 ns
1.0 °C / W
POLARITY
1 2005-08-02


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 30JL2C41 electronic component.


Information Total 4 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
30JL2C41The function is SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK. Toshiba SemiconductorToshiba Semiconductor

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