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What is 2N6675?

This electronic component, produced by the manufacturer "MA-COM", performs the same function as "NPN High Power Silicon Transistor".


2N6675 Datasheet PDF - MA-COM

Part Number 2N6675
Description NPN High Power Silicon Transistor
Manufacturers MA-COM 
Logo MA-COM Logo 


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2N6674 & 2N6675
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/537
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Test Conditions
IC = 200 mAdc
2N6674
2N6675
Symbol Units Min.
V(BR)CEO Vdc
300
400
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
Collector - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Sustaining Voltage
Base - Emitter Saturation Voltage
Dynamic Characteristics
Small-Signal Short-Circuit
Forward Current Transfer Ratio
VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6674
VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6675
VEB = 7 Vdc
VCB = 450 Vdc, 2N6674
ICEX Adc
IEBO mAdc
ICBO mAdc
IC = 1 Adc, VCE = 3 Vdc
IC = 10 Adc, VCE = 2 Vdc
IC = 10 Adc, IB = 2 Adc
IC = 15 Adc, IB = 5 Adc
IC = 1 Adc, IB = 2 Adc
HFE -
VCE(SAT) Vdc
VBE(SAT) Vdc
15
8
IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz | HFE | -
3
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF
150
Max.
0.1
2.0
1.0
40
20
1.0
5.0
1.5
10
500
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0013437


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N6675 electronic component.


Information Total 4 Pages
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Download [ 2N6675.PDF Datasheet ]

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