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What is 2N6666?

This electronic component, produced by the manufacturer "Inchange Semiconductor", performs the same function as "Silicon PNP Darlington Power Transistor".


2N6666 Datasheet PDF - Inchange Semiconductor

Part Number 2N6666
Description Silicon PNP Darlington Power Transistor
Manufacturers Inchange Semiconductor 
Logo Inchange Semiconductor Logo 


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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6666
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A
·Complement to Type 2N6386
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-40 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-8 A
ICM Collector Current-Peak
-15 A
IBB Base Current-DC
Collector Power Dissipation
PC
TC=25
Collector Power Dissipation
Ta=25
Tj Junction Temperature
Tstg Storage Temperature Range
-250
65
2
150
-65~150
mA
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.92 /W
Thermal Resistance,Junction to Ambient 62.5 /W
isc Websitewww.iscsemi.cn


Part Details

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