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What is 2N6318?

This electronic component, produced by the manufacturer "Central Semiconductor", performs the same function as "COMPLEMENTARY SILICON POWER TRANSISTORS".


2N6318 Datasheet PDF - Central Semiconductor

Part Number 2N6318
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Manufacturers Central Semiconductor 
Logo Central Semiconductor Logo 


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2N6315 2N6316 NPN
2N6317 2N6318 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6315 series
devices are complementary silicon power transistors,
mounted in a hermetically sealed metal case,
designed for general purpose amplifier and switching
applications.
TO-66 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N6315
2N6317
60
2N6316
2N6318
80
60 80
5.0
7.0
15
2.0
90
-65 to +200
1.95
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
ICEO
VCE=1/2 Rated VCEO
IEBO
VEB=5.0V
BVCEO IC=100mA, (2N6315, 2N6317)
60
BVCEO IC=100mA, (2N6316, 2N6318)
80
VCE(SAT) IC=4.0A, IB=0.4A
VCE(SAT) IC=7.0A, IB=1.75A
VBE(SAT) IC=7.0A, IB=1.75A
VBE(ON) VCE=4.0V, IC=2.5A
hFE VCE=4.0V, IC=0.5A
35
hFE VCE=4.0V, IC=2.5A
20
hFE VCE=4.0V, IC=7.0A
4.0
hfe VCE=4.0V, IC=500mA, f=1.0kHz
20
fT VCE=10V, IC=250mA, f=1.0MHz
4.0
MAX
0.25
0.25
2.0
0.50
1.0
1.0
2.0
2.5
1.5
100
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
R3 (2-September 2014)


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N6318 electronic component.


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