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Número de pieza | 75N10 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | nELL | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 75N10 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SEMICONDUCTOR
75N10 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(75A, 100Volts)
DESCRIPTION
The Nell 75N10 is a three-terminal silicon device
with current conduction capability of 75A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 100V, and max. threshold voltage of 5 volts.
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications.
These transistors can be operated directly from
integrated circuits.
DD
G
D
S
TO-3PB
(75N10A)
GDS
TO-220AB
(75N10B)
FEATURES
RDS(ON) = 0.025Ω @ VGS = 10V
Ultra low gate charge(74nC typical)
Low reverse transfer capacitance
(CRSS = 275pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
ID (A), Package Limited
VDSS (V)
RDS(ON) (Ω)
QG(nC) typical
75
75
100
0.025 @ VGS = 10V
74
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
VDSS
VDGR
VGS
ID
IDM
IAR
EAR
EAS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 3)
TJ=25°C to 150°C
RGS=1MΩ
TC=25°C
TC=100°C
lAS=50A, L=0.8mH
100
100
±20
75
50
200
50
30
1000
dv/dt
PD
TJ
TSTG
TL
Peak diode recovery dv/dt(Note 4)
Total power dissipation
Linear derating factor above TC=25°C
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
TC=25°C
1.6mm from case
10
300
1.90
-55 to 150
-55 to 150
300
10 (1.1)
Note: 1.Caluclated continuous current based on maximum allowable junction temperature. Package limitation current is 75A
2.Repetitive rating: pulse width limited by junction temperature.
3.L = 0.8mH, IAS ≤ 50A , RG = 25Ω,TJ ≤ 150°C.
4.ISD ≤ 50A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ = 150°C.
UNIT
V
A
mJ
V /ns
W
°C/W
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 8
1 page SEMICONDUCTOR
Fig.7 Typical transfer characteristics
120
105
90
75
60
45
30
15
0
5
TJ = 125°C
25°C
-40°C
6 7 8 9 10
Gate-Source voltage, VGS(V)
11
Fig.9 Typical source to drain diode
forward voltage
200
180
160
140
120
100
80
60
40
20
0
0.5
TJ = 125°C
TJ = 25°C
0.7 0.9 1.1 1.3 1.5
Diode forward voltage, VSD(V)
1.7
75N10 Series RRooHHSS
Nell High Power Products
.
Fig.8 Forward transconductance
40
36
32
28
24
20
16
12
8
4
0
0
-40°C
25°C
TJ = 125°C
20 40 60 80 100 120 140 160 180
Drain current, lD(A)
Fig.10 Gate charge characteristics
10
9
VDS=50V
lD=37.5A
8 lG=10mA
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
Gate charge, QG (nC)
Fig.11 Typical capacitance vs. drain-Source
voltage
10000
f=1 MHZ
Ciss
1000
Coss
Crss
Fig.12 Maximum safe operating area
1000
100
100
RDS(on) Limit
100µ2s5µs
1ms
10ms
DC
Tj=150°C
TC=25°C
Single Pulse
100
0
5 10 15 20 25 30 35 40
Drain-source voltage, VDS(V)
10
1 10 100 1000
Drain-source voltage, VDS(V)
www.nellsemi.com
Page 5 of 8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 75N10.PDF ] |
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