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Datasheet K246 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | K246 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2461
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
FEATURES
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 NEC |
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| 9 | K246 | N-CHANNEL JUNCTION TYPE Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
2SK246
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Ma |
 Toshiba |
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| 8 | K246 | Small switching (60V/ 2A) Transistors
Small switching (60V, 2A)
2SK2463
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm)
FAbsolut |
 ROHM Semiconductor |
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| 7 | K246 | Ultrahigh-Speed Switching Applications Ordering number:ENN6475
N-Channel Silicon MOSFET
2SK2464
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package.
Package |
 Sanyo Semicon Device |
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